SG-210STF12.2880ML0|-40~85°C|12.288MHz|2520mm
频率:12.288MHZ
尺寸:2.5mm×2.0mm×0.8mm
SG-210STF12.2880ML0|-40~85°C|12.288MHz|2520mm ,SG-210STF12.2880ML0晶振,工作温度-40~85°C,频率12.288MHz,2520mm晶振,日本EPSON晶振,耐高温晶振,石英晶体振荡器,进口SMD晶振,汽车电子晶振,通讯设备晶振,无线网络晶振,医疗设备晶振.
SG-210STF12.2880ML0|-40~85°C|12.288MHz|2520mm ,SG-210STF12.2880ML0晶振,工作温度-40~85°C,频率12.288MHz,2520mm晶振,日本EPSON晶振,耐高温晶振,石英晶体振荡器,进口SMD晶振,汽车电子晶振,通讯设备晶振,无线网络晶振,医疗设备晶振.
SG-210STF12.2880ML0|-40~85°C|12.288MHz|2520mm参数表
项目
符号
规格说明
条件
额定频率
f_nom
12.288MHz
请联系我们以便获取其它可用频率的相关信息
电源电压
Vcc
1.6V~3.6V
储存温度
T_stg
-40℃~+125℃
开封裸存
工作温度
T_use
-40℃~ +85℃
频率稳定度
f_tol
±50 ppm
-40℃~ +85℃
功耗
Icc
1.8mA Max
无负载条件, 1MHz
待机电流
I_std
2.7µA
ST=GND
占空比
SYM
45%~55%
50%Vcc极,L_CMOS≤15pf
输出电压
VOH
Vcc-0.4V Min
VOL
0.4V Max
输出负载条件(CMOS)
L_CMOS
15pF Max
输入电压
VIH
80 % VCC Min.
ST 终端
VIL
20 % VCC Max.
上升/下降时间
tr/ tf
3 ns Max.
振荡启动时间
t_str
3 ms Max.
在 90 % VCC 时,所需时间为 0 秒
频率老化
f_aging
3 × 10-6 / year Max.
+25 °C, 第一年,Vcc=1.8V, 2.5V, 3.3V
相位噪音
C/N
- 145 dBc/Hz Typ .
@1kHz ,f0=48MHz
- 158 dBc/Hz Typ .
@100kHz ,f0=48MHz
- 161 dBc/Hz Typ .
@Floor Lv.
SG-210STF12.2880ML0|-40~85°C|12.288MHz|2520mm尺寸图
编码 | 型号 | 频率 | 尺寸 | 输出方式 | 电源电压 | 工作温度 |
X1G0041710002 | SG-210STF | 33.300000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710005 | SG-210STF | 1.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710006 | SG-210STF | 1.843200 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710007 | SG-210STF | 2.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710008 | SG-210STF | 3.686400 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710009 | SG-210STF | 4.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710010 | SG-210STF | 4.096000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710011 | SG-210STF | 5.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710012 | SG-210STF | 6.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710013 | SG-210STF | 6.144000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710014 | SG-210STF | 7.372800 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710015 | SG-210STF | 8.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710016 | SG-210STF | 10.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710017 | SG-210STF | 11.289600 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710018 | SG-210STF | 12.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710019 | SG-210STF | 12.288000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710020 | SG-210STF | 12.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710021 | SG-210STF | 13.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710022 | SG-210STF | 13.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710023 | SG-210STF | 13.560000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710024 | SG-210STF | 14.318180 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710025 | SG-210STF | 14.745600 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710026 | SG-210STF | 15.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710027 | SG-210STF | 16.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710028 | SG-210STF | 19.200000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710029 | SG-210STF | 20.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710030 | SG-210STF | 22.579200 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710031 | SG-210STF | 24.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710032 | SG-210STF | 24.576000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710033 | SG-210STF | 25.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710034 | SG-210STF | 26.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710035 | SG-210STF | 27.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710036 | SG-210STF | 27.120000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710037 | SG-210STF | 28.636360 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710038 | SG-210STF | 29.491200 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710039 | SG-210STF | 30.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710040 | SG-210STF | 32.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710041 | SG-210STF | 33.333000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710042 | SG-210STF | 36.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710043 | SG-210STF | 37.400000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710044 | SG-210STF | 38.400000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710045 | SG-210STF | 40.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710046 | SG-210STF | 48.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710047 | SG-210STF | 50.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710048 | SG-210STF | 52.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710049 | SG-210STF | 54.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710052 | SG-210STF | 8.192000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710055 | SG-210STF | 26.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -20 to 70 °C |
X1G0041710059 | SG-210STF | 25.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 105 °C |
X1G0041710069 | SG-210STF | 8.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 105 °C |
X1G0041710075 | SG-210STF | 33.333300 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 105 °C |
X1G0041710077 | SG-210STF | 25.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -20 to 70 °C |
X1G0041710078 | SG-210STF | 48.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -20 to 70 °C |
X1G0041710079 | SG-210STF | 50.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -20 to 70 °C |
X1G0041710080 | SG-210STF | 66.666700 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.710 to 3.600 V | -40 to 85 °C |
X1G0041710081 | SG-210STF | 75.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.710 to 3.600 V | -40 to 85 °C |
X1G0041710083 | SG-210STF | 1.200000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710084 | SG-210STF | 1.228800 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710085 | SG-210STF | 1.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710086 | SG-210STF | 1.536000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710087 | SG-210STF | 2.048000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710088 | SG-210STF | 2.457600 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710089 | SG-210STF | 2.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710090 | SG-210STF | 3.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710091 | SG-210STF | 3.072000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710092 | SG-210STF | 3.125000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710093 | SG-210STF | 3.579545 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710094 | SG-210STF | 4.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710095 | SG-210STF | 4.800000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710096 | SG-210STF | 4.915200 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710097 | SG-210STF | 5.644800 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710098 | SG-210STF | 6.250000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710099 | SG-210STF | 6.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710100 | SG-210STF | 6.750000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710101 | SG-210STF | 6.780000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710102 | SG-210STF | 7.159090 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710103 | SG-210STF | 7.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710104 | SG-210STF | 8.250000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710105 | SG-210STF | 9.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710106 | SG-210STF | 9.600000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710107 | SG-210STF | 9.830400 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710108 | SG-210STF | 15.625000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710109 | SG-210STF | 16.384000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710110 | SG-210STF | 16.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710111 | SG-210STF | 16.650000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710112 | SG-210STF | 16.666500 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710113 | SG-210STF | 18.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710114 | SG-210STF | 19.440000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710115 | SG-210STF | 19.660800 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710116 | SG-210STF | 31.250000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710117 | SG-210STF | 32.768000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710118 | SG-210STF | 33.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710119 | SG-210STF | 33.330000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710120 | SG-210STF | 33.333300 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.600 to 3.600 V | -40 to 85 °C |
X1G0041710121 | SG-210STF | 62.500000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.710 to 3.600 V | -40 to 85 °C |
X1G0041710122 | SG-210STF | 66.667000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.710 to 3.600 V | -40 to 85 °C |
X1G0041710124 | SG-210STF | 72.000000 MHz | 2.50 x 2.00 x 0.90 mm | CMOS | 1.710 to 3.600 V | -40 to 85 °C |
公司名:深圳市金洛鑫电子有限公司
联系人:茹红青
手机:13510569637
电话:0755-27837162
QQ号:657116624
微信公众号:CITIZENCRYSTAL
搜狐公众号:晶振石英晶振NDK晶振
邮箱:jinluodz@163.com
地址:深圳市宝安区41区甲岸路19号
相关的产品 / Related Products
- DSC1001DL5-024.0000T,2520mm振荡器,Microchip工业应用晶振
- DSC1001DL5-024.0000T,2520mm振荡器,Microchip工业应用晶振,美国进口晶振,Microchip晶振,型号:DSC1001,编码为:DSC1001DL5-024.0000T,频率为:24MHz,电压:1.8V-3.3V,工作温度范围:-40℃至+105℃,频率稳定性:±10ppm,小体积晶振尺寸:2.5x2.0mm封装,四脚贴片晶振,有源晶振,耐高温晶振,石英晶体振荡器。应用于:移动通讯应用,无线网络晶振,监控摄像头晶振,测试设备晶振,工业应用等。
- CWX825-16.384M,7050mm,ConnorWinfield无线晶振,测量设备晶振
- CWX825-16.384M,7050mm,ConnorWinfield无线晶振,测量设备晶振,美国ConnorWinfield晶振,康纳温菲尔德晶振,型号:CWX8xx系列,编码为:CWX825-16.384M,频率为:16.384MHz,频率稳定度:±50ppm,工作电压:5.0V,CMOS输出晶振,工作温度范围:-20℃至+70℃,小体积晶振尺寸:7.0x5.0mm安装,四脚贴片晶振,有源晶振,7050晶振,SMD晶振,石英晶体振荡器(XO),具有超小型,轻薄型,高品质,高性能,高可靠性,高稳定性,低抖动等特点。应用于:电信晶振,无线晶振,医疗设备晶振,测量设备晶振,物联网等应用。
- M3H24TAD-R 25.000000,MtronPTI通讯设备晶振,M3H系列时钟振荡器
- M3H24TAD-R 25.000000,MtronPTI通讯设备晶振,M3H系列时钟振荡器,美国MtronPTI晶振,麦特伦皮晶振厂家,型号:M3H系列,编码为:M3H24TAD-R 25.000000,频率:25MHz,电压:3.3V,频率稳定性:±50ppm,工作温度范围:-40℃至+70℃,HCMOS输出晶振,小体积晶振尺寸:13.2x13.2x5.97mm封装,8 pin DIP正方型钟振,时钟振荡器,石英晶振,有源晶振,石英晶体振荡器。具有高性能,高精度,高品质,高可靠性,低抖动等特点。应用于:汽车电子晶振,安防设备晶振,通信设备晶振,物联网等应用。
JLX-PD
金洛鑫产品系列
PRODUCT LINE
石英晶振
QuartzCrystal
- KDS晶振
- 爱普生晶振
- NDK晶振
- 京瓷晶振
- 精工晶振
- 西铁城晶振
- 大河晶振
- 村田晶振
- 泰艺晶振
- TXC晶振
- 鸿星晶振
- 希华晶振
- 加高晶振
- 百利通亚陶晶振
- 嘉硕晶振
- 津绽晶振
- 玛居礼晶振
- 富士晶振
- SMI晶振
- Lihom晶振
- SHINSUNG晶振
- NAKA晶振
- AKER晶振
- NKG晶振
- NJR晶振
- Sunny晶振
贴片晶振
SMDcrystal
- CTS晶振
- 微晶晶振
- 瑞康晶振
- 康纳温菲尔德晶振
- 高利奇晶振
- Jauch晶振
- AbraconCrystal晶振
- 维管晶振
- ECScrystal晶振
- 日蚀晶振
- 拉隆晶振
- 格林雷晶振
- SiTimeCrystal晶振
- IDTcrystal晶振
- PletronicsCrystal晶振
- StatekCrystal晶振
- AEK晶振
- AEL晶振
- Cardinal晶振
- Crystek晶振
- Euroquartz晶振
- Fox晶振
- Frequency晶振
- GEYER晶振
- KVG晶振
- ILSI晶振
- Mmdcomp晶振
- MtronPTI晶振
- QANTEK晶振
- QuartzCom晶振
- Quarztechnik晶振
- Suntsu晶振
- Transko晶振
- Wi2Wi晶振
- ITTI晶振
- Oscilent晶振
- ACT晶振
- Rubyquartz晶振
- MTI-milliren晶振
- PDI晶振
- IQD晶振
- Microchip晶振
- Silicon晶振
- Anderson晶振
- Fortiming晶振
- CORE晶振
- NIPPON晶振
- NIC晶振
- QVS晶振
- Bomar晶振
- Bliley晶振
- GED晶振
- FILTRONETICS晶振
- STD晶振
- Q-Tech晶振
- Wenzel晶振
- NEL晶振
- EM晶振
- PETERMANN晶振
- FCD-Tech晶振
- HEC晶振
- FMI晶振
- Macrobizes晶振
- AXTAL晶振
- ARGO晶振
- 瑞萨renesas晶振
- Skyworks晶振