5032mm温补晶振X1G005231002300用于无线模块应用
爱普生晶振TG5032CGN,是一款超高稳定性温补晶体振荡器,支持CMOS输出电平,小体积尺寸5.0x3.2mm有源晶振,10脚贴片晶振,电源电压:2.375V至3.63V,频率范围:10MHz至40MHz,具有小尺寸,轻薄型,低抖动,低功耗,低相位噪声,低损耗,低耗能,高稳定性等特点。该款有源晶体振荡器,可以在G:-40℃至+85℃的温度内稳定工作,无铅,符合欧盟RoHS指令,被广泛应用于小型基站,Stratum3,SyncE,IEEE1588,网络系统,车载电子,无线模块,小型便捷式设备等。
5032mm温补晶振X1G005231002300用于无线模块应用
产品编码 | 型号 | 频率 | 贴片晶振 | 输出波 | 电源电压 | 精度 | 工作温度 |
X1G005231000400 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231000500 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231000900 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231001000 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231001100 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231001200 | TG5032CGN | 12.800000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231001300 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231001500 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231001600 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231001700 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231001900 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231002000 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231002300 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231002500 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231002600 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231002900 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003000 | TG5032CGN | 38.880000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003100 | TG5032CGN | 38.880000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003200 | TG5032CGN | 19.200000MHz | 5.00x3.20x1.45mm | CMOS | 2.700 to 3.000 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003300 | TG5032CGN | 19.200000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003400 | TG5032CGN | 20.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003500 | TG5032CGN | 25.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003600 | TG5032CGN | 19.440000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003700 | TG5032CGN | 30.720000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231003900 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004100 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004200 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004300 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004400 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004600 | TG5032CGN | 10.000000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004700 | TG5032CGN | 24.576000MHz | 5.00x3.20x1.45mm | CMOS | 3.135 to 3.465 V | +/-1.0 ppm | -40 to ++85 °C |
X1G005231004800 | TG5032CGN | 40.000000MHz | 5.00x3.20x1.45mm | CMOS | 2.375 to 2.625 V | +/-1.0 ppm | -40 to ++85 °C |
5032mm温补晶振X1G005231002300用于无线模块应用
现代电子技术日新月异的发展,使得石英晶体振荡器广泛应用于现代通信,导航,测量等领域的电子设备中;工程实际应用中许多设备都工作在温度范围变化较大的环境中,由于石英晶体谐振器自身特殊的物理特性,温度的变化会导致晶体振荡器的频率发生偏移.此时晶体振荡器就不能为设备提供稳定时钟频率,导致工作异常,而经过温度补偿的石英晶体振荡器弥补了这一缺陷,从而其应用更加广泛.
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